onsemi MJ11021G Darlington BJT
Trans Darlington PNP 250V 15A 175000mW 3-Pin(2+Tab) TO-3 Tray
Spécifications techniques du produit
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 8.51(Max) |
| Largeur du paquet | 26.67(Max) |
| Longueur du paquet | 39.37 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3 |
| 3 | |
| Forme de sonde | Through Hole |
Amplify your current with the PNP MJ11021G Darlington transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 100@15A@5 V. It has a maximum collector emitter saturation voltage of 2@100mA@10A|3.4@150mA@15A V. This Darlington transistor array's maximum emitter base voltage is 50 V, while its maximum base emitter saturation voltage is 3.8@150mA@15A V. Its maximum power dissipation is 175000 mW. The item will be shipped in tray orientation. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 50 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 175 °C.
Symboles et Empreintes
| EDA / CAD Models |
