onsemiMJB44H11GGP BJT

Trans GP BJT NPN 80V 10A 2000mW 3-Pin(2+Tab) D2PAK Tube

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MJB44H11G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

510 pièces: Prêt à être expédié dès aujourd'hui

    Total$0.53Price for 1

    • Prêt à être expédié dès aujourd'hui

      Ships from:
      États Unis
      Date Code:
      2210+
      Manufacturer Lead Time:
      15 semaines
      Country Of origin:
      Malaisie
      • In Stock: 510 pièces
      • Price: $0.5275