onsemiMJB5742T4GDarlington BJT
Trans Darlington NPN 400V 8A 2000mW 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) |
| Largeur du paquet | 9.65(Max) |
| Longueur du paquet | 10.29(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Look no further than ON Semiconductor's NPN MJB5742T4G Darlington transistor, which can amplify the signal to provide higher current gains. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 50@0.5A@5 V|200@4A@5V. It has a maximum collector emitter saturation voltage of 2@0.2A@4A|3@0.4A@8A V. This Darlington transistor array's maximum emitter base voltage is 8 V, while its maximum base emitter saturation voltage is 2.5@0.2A@4A|3.5@0.4A@8A V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum emitter base voltage of 8 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |