| RoHS (Union Européenne) | Compliant with Exemption |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 9.28(Max) mm |
| Largeur du paquet | 4.83(Max) mm |
| Longueur du paquet | 10.53(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| Décompte de broches | 3 |
| Forme de sonde | Through Hole |
The three terminals of this NPN MJE18004G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 9 V. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
