onsemiMJE270GDarlington BJT
Trans Darlington NPN 100V 2A 1500mW 3-Pin(3+Tab) TO-225 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 11.1(Max) |
| Largeur du paquet | 3(Max) |
| Longueur du paquet | 7.8(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| 3 | |
| Forme de sonde | Through Hole |
Increase the current gain in your circuit by using ON Semiconductor's NPN MJE270G Darlington transistor. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@20mA@3V|1500@120mA@10 V. It has a maximum collector emitter saturation voltage of 2@0.2mA@20mA|3@1.2mA@120mA V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |