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onsemiMJE340GGP BJT
Trans GP BJT NPN 300V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 11.1(Max) mm |
| Largeur du paquet | 3(Max) mm |
| Longueur du paquet | 7.8(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| 3 | |
| Forme de sonde | Through Hole |
The NPN MJE340G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 20000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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