Diodes IncorporatedMMBTH24-7-FBJT FR

Trans RF BJT NPN 40V 0.05A

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTH24-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.