onsemiNJD35N04GDarlington BJT
Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Are you looking for an amplified current signal in your circuit? The NPN NJD35N04G Darlington transistor from ON Semiconductor yields a much higher gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2@20mA@2A V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 2000@2A@2 V|300@4A@2V. It has a maximum collector emitter saturation voltage of 1.5@20mA@2A V. Its maximum power dissipation is 45000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |