onsemi NJD35N04T4G Darlington BJT
Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK T/R
Spécifications techniques du produit
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Are you looking for an amplified current signal in your circuit? The NPN NJD35N04T4G Darlington transistor from ON Semiconductor yields a much higher gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2@20mA@2A V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 2000@2A@2 V|300@4A@2V. It has a maximum collector emitter saturation voltage of 1.5@20mA@2A V. Its maximum power dissipation is 45000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
Symboles et Empreintes
| EDA / CAD Models |
