onsemiNJT4030PT3GGP BJT

Trans GP BJT PNP 40V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP NJT4030PT3G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

4 001 pièces: Prêt à être expédié dès aujourd'hui

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      Ships from:
      États Unis
      Date Code:
      2120+
      Manufacturer Lead Time:
      12 semaines
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      Maximum Of:
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      Country Of origin:
      Malaisie
         
      • Price: $0.1552
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié dès aujourd'hui

      Ships from:
      États Unis
      Date Code:
      2120+
      Manufacturer Lead Time:
      12 semaines
      Country Of origin:
      Malaisie
      • In Stock: 1 pièce
      • Price: $0.1552
    • (4000)

      Prêt à être expédié dès aujourd'hui

      Increment:
      4000
      Ships from:
      États Unis
      Date Code:
      +
      Manufacturer Lead Time:
      12 semaines
      • In Stock: 4 000 pièces
      • Price: $0.1446