| RoHS (Union Européenne) | Compliant |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | WDFN EP |
| Décompte de broches | 3 |
| Forme de sonde | No Lead |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS12501UW3T2G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 6 V.
