onsemiNSS30100LT1GGP BJT

Trans GP BJT PNP 30V 1A 710mW 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile PNP NSS30100LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 710 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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2 118 pièces: Prêt à être expédié dès aujourd'hui

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      Prêt à être expédié dès aujourd'hui

      Ships from:
      États Unis
      Date Code:
      2302+
      Manufacturer Lead Time:
      14 semaines
      Minimum Of :
      1
      Maximum Of:
      2118
      Country Of origin:
      Chine
         
      • Price: $0.2397
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié dès aujourd'hui

      Ships from:
      États Unis
      Date Code:
      2302+
      Manufacturer Lead Time:
      14 semaines
      Country Of origin:
      Chine
      • In Stock: 2 118 pièces
      • Price: $0.2397