| RoHS (Union Européenne) | Compliant |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.75 |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| Décompte de broches | 8 |
| Forme de sonde | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile npn and PNP NSS40302PDR2G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|7@PNP V. Its maximum power dissipation is 783 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6@NPN|7@PNP V.
