STMicroelectronicsPD20010-ERF MOSFET
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 3.5 |
| Largeur du paquet | 9.4 |
| Longueur du paquet | 9.5 |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | PowerSO-10RF (Formed lead) |
| 3 | |
| Forme de sonde | Gull-wing |
This PD20010-E RF amplifier from STMicroelectronics uses semiconductor technology to operate at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 59000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
| EDA / CAD Models |