STMicroelectronicsPD55015-ERF MOSFET
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
Single | |
Enhancement | |
N | |
1 | |
LDMOS | |
40 | |
±20 | |
20(Min) | |
5 | |
89@12.5V | |
6.5@12.5V | |
60@12.5V | |
2.5 | |
73000 | |
15(Min) | |
14 | |
1000 | |
55 | |
-65 | |
165 | |
Tube | |
Industrial | |
Installation | Surface Mount |
Hauteur du paquet | 3.5 |
Largeur du paquet | 9.4 |
Longueur du paquet | 9.5 |
Carte électronique changée | 3 |
Conditionnement du fournisseur | PowerSO-10RF (Formed lead) |
3 | |
Forme de sonde | Gull-wing |
Implement a switching capability into your circuit design with this PD55015-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 73000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz.
EDA / CAD Models |