STMicroelectronicsPD84001RF MOSFET
Trans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R
Compliant | |
EAR99 | |
Obsolete | |
Automotive | No |
PPAP | No |
Single Dual Source | |
Enhancement | |
N | |
1 | |
LDMOS | |
18 | |
15 | |
20(Min) | |
1.5 | |
14.7@7V | |
1.3@7V | |
13.3@7V | |
6000 | |
1 | |
15 | |
1000 | |
60 | |
-65 | |
150 | |
Tape and Reel | |
Industrial | |
Installation | Surface Mount |
Hauteur du paquet | 1.6(Max) |
Largeur du paquet | 2.6(Max) |
Longueur du paquet | 4.6(Max) |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-89 |
4 | |
Forme de sonde | Flat |
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this PD84001 RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 6000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C.
EDA / CAD Models |