NXP SemiconductorsPTVS12VP1UP,115TVS
Diode TVS Single Uni-Dir 12V 600W 2-Pin CFP5 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Largeur du paquet | 2.7(Max) mm |
| Longueur du paquet | 4(Max) mm |
| Carte électronique changée | 2 |
| Nom de lemballage standard | SOD |
| Conditionnement du fournisseur | CFP5 |
| 2 | |
| Forme de sonde | Flat |
NXP Semiconductors' PTVS12VP1UP,115 TVS diode is designed to protect electronic components and circuits from electrical overstress from overvoltage and electrostatic discharge. Its peak pulse power dissipation is 600 W. Its test current is 1 mA. This device's maximum clamping voltage is 19.9 V and minimum breakdown voltage is 13.3 V. Its maximum leakage current is 2.5 μA. This TVS diode has a minimum operating temperature of -55 °C and a maximum of 150 °C. This product will be shipped in tape and reel packaging for quick mounting and safe delivery.
| EDA / CAD Models |