ToshibaRN2315TE85LFBJT numérique
Trans Digital BJT PNP 50V 0.1mA 100mW 3-Pin USM T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 50@10mA@5V | |
| 200 | |
| 2.2 | |
| 0.3@0.25mA@5mA | |
| 0.22 | |
| 100 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | USM |
| 3 |
Toshiba brings you their latest PNP RN2315TE85LF digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |