ToshibaRN2427(TE85L,F)BJT numérique
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 800 | |
| 90@100mA@1V | |
| 200 | |
| 2.2 | |
| 0.25@1mA@50mA | |
| 0.22 | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | S-MINI |
| Conditionnement du fournisseur | S-Mini |
| 3 | |
| Forme de sonde | Gull-wing |
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP RN2427TE85LF digital transistor from Toshiba is for you. This product's maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |