onsemiSMMBT3906WT1GGP BJT

Trans GP BJT PNP 40V 0.2A 150mW 3-Pin SC-70 T/R Automotive AEC-Q101

The versatility of this PNP SMMBT3906WT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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Total en stock: 150 813 pièces

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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      Date Code:
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      Manufacturer Lead Time:
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