onsemiSMMUN2111LT1GBJT numérique

Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101

You can apply the benefits of traditional BJTs to digital circuits using the PNP SMMUN2111LT1G digital transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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Quantity Increments of 3000 Minimum 30000
  • Manufacturer Lead Time:
    12 semaines
    Country Of origin:
    Chine
    • Price: $0.0172
    1. 30000+$0.0172
    2. 99000+$0.0158