onsemiSMUN5111T1GBJT numérique
Trans Digital BJT PNP 50V 0.1A 310mW 3-Pin SC-70 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 35@5mA@10V | |
| 10 | |
| 0.25@0.3mA@10mA | |
| 1 | |
| 310 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85 |
| Largeur du paquet | 1.24 |
| Longueur du paquet | 2 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this PNP SMUN5111T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |