onsemiSMUN5311DW1T3GBJT numérique
Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN|PNP | |
| Dual | |
| 50 | |
| 100 | |
| 35@5mA@10V | |
| 10 | |
| 0.25@0.3mA@10mA | |
| 1 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP SMUN5311DW1T3G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |