| RoHS (Union Européenne) | Compliant with Exemption |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) |
| Largeur du paquet | 9.35(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| Décompte de broches | 3 |
| Forme de sonde | Gull-wing |
This STB28N65M2 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 170000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh m2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
