STMicroelectronicsSTGB10H60DFPuce IGBT
Trans IGBT Chip N-CH 600V 20A 115W 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.5 | |
| 20 | |
| 0.25 | |
| 115 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Industrial | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) |
| Largeur du paquet | 9.35(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
This STGB10H60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 115000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.
| EDA / CAD Models |