STMicroelectronicsSTGB19NC60HDT4Puce IGBT
Trans IGBT Chip N-CH 600V 40A 130W 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) |
| Largeur du paquet | 9.35(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
You won't need to worry about any lagging in your circuit with this STGB19NC60HDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 600 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |