STMicroelectronicsSTGB30M65DF2Puce IGBT
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.55 | |
| 60 | |
| 250 | |
| 258 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Industrial | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) |
| Largeur du paquet | 9.35(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
This powerful and secure STGB30M65DF2 IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 258000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |