STMicroelectronicsSTGD10HF60KDPuce IGBT
Trans IGBT Chip N-CH 600V 18A 62.5W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) |
| Largeur du paquet | 6.2(Max) |
| Longueur du paquet | 6.6(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Use the STGD10HF60KD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |