STMicroelectronicsSTGF10H60DFPuce IGBT
Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.5 | |
| 20 | |
| 0.25 | |
| 30 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 16.4(Max) |
| Largeur du paquet | 4.6(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
You won't need to worry about any lagging in your circuit with this STGF10H60DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 30000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |