STMicroelectronicsSTGFW20V60DFPuce IGBT
Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 26.7(Max) |
| Largeur du paquet | 5.7(Max) |
| Longueur du paquet | 15.7(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3PF |
| 3 | |
| Forme de sonde | Through Hole |
The STGFW20V60DF IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 52000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
| EDA / CAD Models |