STMicroelectronicsSTGW20H60DFPuce IGBT
Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.6 | |
| 40 | |
| 0.25 | |
| 167 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 20.15(Max) |
| Largeur du paquet | 5.15(Max) |
| Longueur du paquet | 15.75(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
This STGW20H60DF IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 167000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |