STMicroelectronicsSTGW39NC60VDPuce IGBT
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.8 | |
| 80 | |
| 0.1 | |
| 250 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 20.15(Max) |
| Largeur du paquet | 5.15(Max) |
| Longueur du paquet | 15.75(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Minimize the current at your gate with the STGW39NC60VD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |