STMicroelectronicsSTGWT80H65DFBPuce IGBT
Trans IGBT Chip N-CH 650V 120A 470W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.6 | |
| 120 | |
| 0.25 | |
| 470 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 18.7 |
| Largeur du paquet | 5(Max) |
| Longueur du paquet | 15.8(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3P |
| 3 | |
| Forme de sonde | Through Hole |
The STGWT80H65DFB IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 469000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |