STMicroelectronicsSTN2580GP BJT
Trans GP BJT NPN 400V 1A 1600mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 400 | |
| 9 | |
| 1.1@0.2A@1A | |
| 1@0.2A@1A | |
| 1 | |
| 60@250mA@5V | |
| 1600 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.8(Max) |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, STMicroelectronics' NPN STN2580 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |