STMicroelectronics STX616-AP GP BJT
Trans GP BJT NPN 500V 1.5A 2800mW 3-Pin TO-92 T/R
Spécifications techniques du produit
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 500 | |
| 12 | |
| 1.4@200mA@1A|1@40mA@0.2A | |
| 0.5@40mA@0.2A|1@200mA@1A | |
| 1.5 | |
| 12@500mA@5V|17@500uA@2V|25@200mA@5V|4@1.5A@5V | |
| 2800 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 4.95(Max) |
| Largeur du paquet | 3.94(Max) |
| Longueur du paquet | 4.95(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 | |
| Forme de sonde | Formed |
Use this versatile NPN STX616-AP GP BJT from STMicroelectronics to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 2800 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 12 V.
Symboles et Empreintes
| EDA / CAD Models |
