| RoHS (Union Européenne) | Compliant with Exemption |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.75 |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 26 |
| Largeur du paquet | 5 |
| Longueur du paquet | 20 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3PL |
| Décompte de broches | 3 |
| Forme de sonde | Through Hole |
The versatility of this NPN TTC5200(Q) GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.
