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onsemiULN2003ADR2GDarlington BJT
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Array 7 | |
| 7 | |
| 50 | |
| 0.5 | |
| 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA | |
| 1000@350mA@2V | |
| -20 | |
| 85 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 10(Max) |
| Carte électronique changée | 16 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 16 | |
| Forme de sonde | Gull-wing |
Do you have a circuit where a higher current gain is required? ON Semiconductor's NPN ULN2003ADR2G Darlington transistor can help! This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This Darlington transistor array has an operating temperature range of -20 °C to 85 °C.
| EDA / CAD Models |