Diodes IncorporatedZXT790AKTCGP BJT
Trans GP BJT PNP 40V 3A 3900mW 3-Pin(2+Tab) TO-252 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 2.29 |
| Largeur du paquet | 6.1 |
| Longueur du paquet | 6.58 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | TO-252 |
| 3 | |
| Forme de sonde | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP ZXT790AKTC GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 3900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |