Diodes IncorporatedZXTC2062E6TAGP BJT
Trans GP BJT NPN/PNP 20V 4A/3.5A 1700mW 6-Pin SOT-26 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 3 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-26 |
| 6 | |
| Forme de sonde | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This npn and PNP ZXTC2062E6TA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |