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Diodes IncorporatedZXTP2012ZTAGP BJT
Trans GP BJT PNP 60V 4.3A 2100mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 60 | |
| 7 | |
| 1.05@500mA@5A | |
| 0.02@10mA@0.1A|0.065@100mA@1A|0.11@200mA@2A|0.215@500mA@5A | |
| 4.3 | |
| 20 | |
| 100@10mA@1V|100@2A@1V|10@10A@1V|45@5A@1V | |
| 2100 | |
| 120(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Commercial | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6(Max) |
| Largeur du paquet | 2.6(Max) |
| Longueur du paquet | 4.6(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
The versatility of this PNP ZXTP2012ZTA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |