Central Semiconductor2N5322GP BJT

Trans GP BJT PNP 75V 2A 10000mW 3-Pin TO-39 Box

This PNP 2N5322 general purpose bipolar junction transistor from Central Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 10000 mW. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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Quantity Increments of 1 Minimum 500
  • Manufacturer Lead Time:
    26 settimane
    • Price: $1.394
    1. 500+$1.394