Central Semiconductor2N5322通用双极型晶体管
Trans GP BJT PNP 75V 2A 10000mW 3-Pin TO-39 Box
| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 75 | |
| 7 | |
| 0.7@50mA@500mA | |
| 2 | |
| 500 | |
| 10@1A@2V|30@500mA@4V | |
| 10000 | |
| 5(Min) | |
| -65 | |
| 200 | |
| Box | |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| Package Height | 6.6(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| 3 | |
| Lead Shape | Through Hole |
This PNP 2N5322 general purpose bipolar junction transistor from Central Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 10000 mW. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |