STMicroelectronics2STC4467GP BJT
Trans GP BJT NPN 120V 8A 80000mW 3-Pin(3+Tab) TO-3P Tube
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 15.1 mm |
| Package Width | 5(Max) mm |
| Package Length | 15.8(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3P |
| 3 | |
| Lead Shape | Through Hole |
STMicroelectronics has the solution to your circuit's high-voltage requirements with their NPN 2STC4467 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |