Infineon Technologies AGBC817K25E6327HTSA1GP BJT

Trans GP BJT NPN 45V 0.5A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile NPN BC817K25E6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

Totale in stock: 198.000 pezzi

Regional Inventory: 12.000

    Total$107.10Price for 3000

    12.000 in magazzino: Spedisce domani

    • (3000)

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2408+
      Manufacturer Lead Time:
      4 settimane
      Country Of origin:
      Austria
      • In Stock: 12.000 pezzi
      • Price: $0.0357
    • (3000)

      Spedisce tra 3 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2327+
      Manufacturer Lead Time:
      4 settimane
      Country Of origin:
      Cina
      • In Stock: 186.000 pezzi
      • Price: $0.0286