Infineon Technologies AGBC850CWH6327XTSA1GP BJT

Trans GP BJT NPN 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC850CWH6327XTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Totale in stock: 219.000 pezzi

Regional Inventory: 207.000

    Total$234.00Price for 3000

    207.000 in magazzino: Spedisce domani

    • (3000)

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2248+
      Manufacturer Lead Time:
      4 settimane
      Country Of origin:
      Austria
      • In Stock: 207.000 pezzi
      • Price: $0.0780
    • (3000)

      Spedisce tra 3 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      +
      Manufacturer Lead Time:
      4 settimane
      • In Stock: 12.000 pezzi
      • Price: $0.0815