Infineon Technologies AGBC850CWH6327XTSA1GP BJT

Trans GP BJT NPN 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC850CWH6327XTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Total en Stock: 219,000 piezas

Regional Inventory: 207,000

    Total$234.00Price for 3000

    207,000 en existencias: Se puede enviar mañana

    • (3000)

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      Ships from:
      Estados Unidos de América
      Date Code:
      2248+
      Manufacturer Lead Time:
      4 semanas
      Country Of origin:
      Austria
      • In Stock: 207,000 piezas
      • Price: $0.0780
    • (3000)

      Se puede enviar en 3 días

      Ships from:
      Países Bajos
      Date Code:
      +
      Manufacturer Lead Time:
      4 semanas
      • In Stock: 12,000 piezas
      • Price: $0.0815