Infineon Technologies AGBCR503E6327HTSA1BJT digitale

Trans Digital BJT NPN 50V 0.5mA 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101

If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR503E6327HTSA1 digital transistor from Infineon Technologies is for you. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

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1.593 pezzi: Spedisce tra 11 giorni

    Total$4.64Price for 1

    • Spedisce tra 11 giorni

      Ships from:
      Stati Uniti d'America
      Date Code:
      2138+
      Manufacturer Lead Time:
      0 settimane
      Country Of origin:
      Cina
      • In Stock: 1.593 pezzi
      • Price: $4.637