Infineon Technologies AGBCR503E6327HTSA1BJT digital
Trans Digital BJT NPN 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 500 | |
| 40@50mA@5V | |
| 100 | |
| 2.2 | |
| 0.3@2.5mA@50mA | |
| 1 | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR503E6327HTSA1 digital transistor from Infineon Technologies is for you. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |