onsemi MC33152VDR2G Gate driver e Driver di potenza
Driver 1.5A 2-OUT High Speed Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.60 | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Non-Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 36(Typ) | |
| 32(Typ) | |
| 55(Typ) | |
| CMOS|LSTTL | |
| 6.1 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 560 | |
| -40 | |
| 125 | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Never worry about your high power transistor not turning on and off by using this MC33152VDR2G power driver by ON Semiconductor. This device has a maximum propagation delay time of 55(typ) ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
| EDA / CAD Models |
