Compliant | |
EAR99 | |
Obsolete | |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 11.1(Max) mm |
Package Width | 3(Max) mm |
Package Length | 7.8(Max) mm |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-225 |
3 | |
Lead Shape | Through Hole |
This NPN MJE344G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.